? semiconductor components industries, llc, 2008 october, 2008 ? rev. 3 1 publication order number: nsbc114edp6/d nsbc114edp6t5g series preferred devices dual digital transistors (brt) npn silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. the digital transistor eliminates these individual components by integrating them into a single device. the use of a digital transistor can reduce both system cost and board space. the device is housed in the sot ? 963 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? the sot ? 963 package can be soldered using wave or reflow. ? available in 4 mm, 8000 unit tape & reel ? these are pb ? free devices ? these are halide ? free devices maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. device marking information see specific marking information in the device marking table on page 2 of this data sheet. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) http://onsemi.com marking diagram device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. nsbc114edp6t5g sot ? 963 (pb ? free) 8000 / tape & reel x = specific device code m = date code = pb ? free package sot ? 963 case 527ad npn silicon digital transistors xm 1
nsbc114edp6t5g series http://onsemi.com 2 thermal characteristics characteristic symbol max unit single heated total device dissipation t a = 25 c (note 1) derate above 25 c p d 231 1.9 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 540 c/w total device dissipation t a = 25 c (note 2) derate above 25 c p d 269 2.2 mw mw/ c thermal resistance (note 2) junction-to-ambient r ja 464 c/w dual heated (note 3) total device dissipation t a = 25 c (note 1) derate above 25 c p d 339 2.7 mw mw/ c thermal resistance (note 1) junction-to-ambient r ja 369 c/w total device dissipation t a = 25 c (note 2) derate above 25 c p d 408 3.3 mw mw/ c thermal resistance (note 2) junction-to-ambient r ja 306 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 4 @ 100 mm 2 , 1 oz. copper traces, still air. 2. fr ? 4 @ 500 mm 2 , 1 oz. copper traces, still air. 3. dual heated values assume total power is sum of two equally powered channels. device marking and resistor values device marking* r1 (k) r2 (k) package shipping ? nsbc114edp6t5g a (270 ) 10 10 sot ? 963 (pb ? free) 8000/tape & reel nsbc124edp6t5g r (0 ) 22 22 NSBC144EDP6T5G d (0 ) 47 47 nsbc114ydp6t5g p (0 ) 10 47 nsbc123tdp6t5g a (90 ) 2.2 nsbc143edp6t5g t (0 ) 4.7 4.7 nsbc143zdp6t5g y (0 ) 4.7 47 nsbc123jdp6t5g d (90 ) 2.2 47 nsbc144wdp6t5g v (0 ) 47 22 nsbc114tdp6t5g r (180 ) 10 nsbc115tdp6t5g f (0 ) 100 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *(xx ) = degree rotation in the clockwise direction.
nsbc114edp6t5g series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector ? emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter ? base cutoff current nsbc114edp6t5g (v eb = 6.0 v, i c = 0) nsbc124edp6t5g NSBC144EDP6T5G nsbc114ydp6t5g nsbc114tdp6t5g nsbc123tdp6t5g nsbc115tdp6t5g nsbc143edp6t5g nsbc143zdp6t5g nsbc123jdp6t5g nsbc144wdp6t5g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 4.0 0.1 1.5 0.18 0.2 0.13 madc collector ? base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector ? emitter breakdown voltage (note 4) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 4) dc current gain nsbc114edp6t5g (v ce = 10 v, i c = 5.0 ma) nsbc124edp6t5g NSBC144EDP6T5G nsbc114ydp6t5g nsbc114tdp6t5g/nsbc115tdp6t5g/nsbc123tdp6t5g nsbc143edp6t5g nsbc143zdp6t5g nsbc123jdp6t5g nsbc144wdp6t5g h fe 35 60 80 80 160 15 80 80 80 60 100 140 140 350 30 200 150 140 ? ? ? ? ? ? ? ? ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) nsbc114edp6t5g/nsbc124edp6t5g NSBC144EDP6T5G/nsbc114ydp6t5g nsbc123jdp6t5g/nsbc144wdp6t5g (i c = 10 ma, i b = 1 ma) nsbc143edp6t5g/nsbc143zdp6t5g nsbc114tdp6t5g/nsbc123tdp6t5g (i c = 10 ma, i b = 5.0 ma) nsbc115tdp6t5g v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) nsbc114tdp6t5g nsbc114edp6t5g nsbc124edp6t5g nsbc114ydp6t5g nsbc123tdp6t5g nsbc143edp6t5g nsbc143zdp6t5g nsbc123jdp6t5g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) NSBC144EDP6T5G (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) nsbc144wdp6t5g (v cc = 5.0 v, v b = 5.0 v, r l = 1.0 k ) nsbc115tdp6t5g v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0%.
nsbc114edp6t5g series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics (note 5) characteristic symbol min typ max unit output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) nsbc114edp6t5g/nsbc124edp6t5g NSBC144EDP6T5G/nsbc114ydp6t5g nsbc143edp6t5g/nsbc123jdp6t5g nsbc144wdp6t5g (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) nsbc123tdp6t5g/nsbc143zdp6t5g/nsbc114tdp6t5g/ nsbc115tdp6t5g v oh 4.9 ? ? vdc input resistor nsbc114tdp6t5g nsbc114edp6t5g nsbc124edp6t5g NSBC144EDP6T5G nsbc114ydp6t5g nsbc114ydp6t5g nsbc123tdp6t5g nsbc143edp6t5g nsbc143zdp6t5g nsbc123jdp6t5g nsbc144wdp6tg nsbc115tdp6t5g r1 7.0 7.0 15.4 32.9 7.0 7.0 1.5 3.3 3.3 1.54 32.9 70 10 10 22 47 10 10 2.2 4.7 4.7 2.2 47 100 13 13 28.6 61.1 13 13 2.9 6.1 6.1 2.86 61.1 130 k resistor ratio nsbc114edp6t5g/nsbc124edp6t5g/ NSBC144EDP6T5G/nsbc123edp6t5g nsbc114ydp6t5g nsbc114tdp6t5g/nsbc115tdp6t5g//nsbc123tdp6t5g nsbc143zdp6t5g nsbc123jdp6t5g nsbc144wdp6t5g r 1 /r 2 0.8 0.17 ? 0.055 0.038 1.7 1.0 0.21 ? 0.1 0.047 2.1 1.2 0.25 ? 0.185 0.056 2.6 5. pulse test: pulse width < 300 s, duty cycle < 2.0%.
nsbc114edp6t5g series http://onsemi.com 5 typical electrical characteristics ? nsbc114edp6t5g 0.01 0.10 1.0 0 5 10 15 20 25 30 35 40 45 50 figure 1. v ce(sat) vs. i c i c , collector current (ma) v ce(sat) , collector ? to ? emitter saturation voltage (v) t a =25 c t a = 150 c t a = ? 55 c 1.0 10 100 1000 0.1 1 10 100 v ce = 10 v 150 c 25 c ? 55 c figure 2. dc current gain i c , collector current (ma) h fe , dc current gain 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 0 5 10 15 20 25 30 35 40 45 50 figure 3. output capacitance v cb , collector base voltage (v) c obo , output capacitance (pf) 0.01 0.1 1 10 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 150 c 25 c ? 55 c i c , collector current (ma) figure 4. output current vs. input voltage v in , input voltage (v) 0.10 1.0 10 0 5 10 15 20 25 30 35 40 45 50 figure 5. input voltage vs. output current i c , collector current (ma) v in , input voltage (v) 150 c 25 c ? 55 c i c /i b = 10
nsbc114edp6t5g series http://onsemi.com 6 typical applications for npn brts load +12 v figure 6. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from p or other logic +12 v figure 7. open collector inverter: inverts the input signal figure 8. inexpensive, unregulated current source
nsbc114edp6t5g series http://onsemi.com 7 package dimensions sot ? 963 case 527ad ? 01 issue d *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim min nom max millimeters a 0.34 0.37 0.40 b 0.10 0.15 0.20 c 0.07 0.12 0.17 d 0.95 1.00 1.05 e 0.75 0.80 0.85 e 0.35 bsc l 0.05 0.10 0.15 0.95 1.00 1.05 h e e b e d c a l c 0.08 h e 6x a 12 3 4 5 6 0.004 0.006 0.008 0.003 0.005 0.007 0.037 0.039 0.041 0.03 0.032 0.034 0.014 bsc 0.002 0.004 0.006 0.037 0.039 0.041 min nom max inches notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 0.35 0.014 0.20 0.008 mm inches scale 20:1 0.90 0.0354 0.35 0.014 0.20 0.008 a b b c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. nsbc114edp6/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
